| PART |
Description |
Maker |
| 1N4148S |
Fast Switching Speed For General Purpose Switching Applications High Conductance
|
TY Semiconductor Co., L...
|
| SIDC14D60F6 SIDC14D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SBP13005-O |
High Voltage Fast Switching NPN
|
SemiWell Semiconductor
|
| FJP5554TU FJP5554 |
High Voltage Fast Switching Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N5671 2N5672 |
HIGH CURRENT FAST SWITCHING APPLICATIONS
|
Comset Semiconductor
|
| BAV20W-G BAV21W-G |
High Voltage Fast Switching Diode
|
Taiwan Semiconductor Company, Ltd
|
